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Other articles related with "leakage current"：
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98502 |
Yi Huang(黄义), Wen Yang(杨稳), Qi Wang(王琦), Sheng Gao(高升), Wei-Zhong Chen(陈伟中), Xiao-Sheng Tang(唐孝生), Hong-Sheng Zhang(张红升), and Bin Liu(刘斌) |
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NiO/β-Ga2O3 heterojunction diodes with ultra-low leakage current below 10-10 A and high thermostability |
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Chin. Phys. B
2023 Vol.32 (9): 98502-098502
[Abstract]
(122)
[HTML 1 KB]
[PDF 1197 KB]
(109)
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117105 |
Zhihong Chen(陈治宏), Minhan Mi(宓珉瀚), Jielong Liu(刘捷龙), Pengfei Wang(王鹏飞), Yuwei Zhou(周雨威), Meng Zhang(张濛), Xiaohua Ma(马晓华), and Yue Hao(郝跃) |
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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications |
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Chin. Phys. B
2022 Vol.31 (11): 117105-117105
[Abstract]
(306)
[HTML 1 KB]
[PDF 831 KB]
(94)
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96701 |
He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙) |
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Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor |
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Chin. Phys. B
2020 Vol.29 (9): 96701-096701
[Abstract]
(601)
[HTML 0 KB]
[PDF 1725 KB]
(166)
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34206 |
Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Wei Liu(刘炜), Feng Liang(梁锋), Shuang-Tao Liu(刘双韬), Yao Xing(邢瑶), Li-Qun Zhang(张立群) |
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Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift |
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Chin. Phys. B
2020 Vol.29 (3): 34206-034206
[Abstract]
(647)
[HTML 1 KB]
[PDF 705 KB]
(126)
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127703 |
Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平) |
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Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content |
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Chin. Phys. B
2019 Vol.28 (12): 127703-127703
[Abstract]
(449)
[HTML 1 KB]
[PDF 1950 KB]
(114)
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97309 |
Sheng Zhang(张昇), Ke Wei(魏珂), Yang Xiao(肖洋), Xiao-Hua Ma(马晓华), Yi-Chuan Zhang(张一川), Guo-Guo Liu(刘果果), Tian-Min Lei(雷天民), Ying-Kui Zheng(郑英奎), Sen Huang(黄森), Ning Wang(汪宁), Muhammad Asif, Xin-Yu Liu(刘新宇) |
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Effect of SiN: Hx passivation layer on the reverse gate leakage current in GaN HEMTs |
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Chin. Phys. B
2018 Vol.27 (9): 97309-097309
[Abstract]
(766)
[HTML 1 KB]
[PDF 892 KB]
(209)
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98504 |
Jianfei Li(李建飞), Yuanjie Lv(吕元杰), Changfu Li(李长富), Ziwu Ji(冀子武), Zhiyong Pang(庞智勇), Xiangang Xu(徐现刚), Mingsheng Xu(徐明升) |
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Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs |
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Chin. Phys. B
2017 Vol.26 (9): 98504-098504
[Abstract]
(625)
[HTML 0 KB]
[PDF 937 KB]
(340)
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87304 |
Yanrong Wang(王艳蓉), Hong Yang(杨红), Hao Xu(徐昊), Weichun Luo(罗维春), Luwei Qi(祁路伟), Shuxiang Zhang(张淑祥), Wenwu Wang(王文武), Jiang Yan(闫江), Huilong Zhu(朱慧珑), Chao Zhao(赵超), Dapeng Chen(陈大鹏), Tianchun Ye(叶甜春) |
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Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process |
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Chin. Phys. B
2017 Vol.26 (8): 87304-087304
[Abstract]
(813)
[HTML 1 KB]
[PDF 1310 KB]
(238)
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27105 |
Yong Lei(雷勇), Jing Su(苏静), Hong-Yan Wu(吴红艳), Cui-Hong Yang(杨翠红), Wei-Feng Rao(饶伟锋) |
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On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases |
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Chin. Phys. B
2017 Vol.26 (2): 27105-027105
[Abstract]
(637)
[HTML 1 KB]
[PDF 306 KB]
(411)
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17804 |
Hai-Juan Cui(崔海娟), Hong-Chun Yang(杨宏春), Jun Xu(徐军), Yu-Ming Yang(杨宇明), Zi-Xian Yang(杨子贤) |
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Roles of voltage in semi-insulating GaAs photoconductive semiconductor switch |
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Chin. Phys. B
2017 Vol.26 (1): 17804-017804
[Abstract]
(650)
[HTML 1 KB]
[PDF 334 KB]
(619)
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117304 |
Fang Liu(刘芳), Zhixin Qin(秦志新) |
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Effects of fluorine-based plasma treatment and thermal annealing on high-Al content AlGaN Schottky contact |
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Chin. Phys. B
2016 Vol.25 (11): 117304-117304
[Abstract]
(662)
[HTML 1 KB]
[PDF 433 KB]
(268)
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107106 |
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军) |
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Modified model of gate leakage currents in AlGaN/GaN HEMTs |
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Chin. Phys. B
2016 Vol.25 (10): 107106-107106
[Abstract]
(647)
[HTML 1 KB]
[PDF 369 KB]
(328)
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126701 |
Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) |
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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses |
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Chin. Phys. B
2015 Vol.24 (12): 126701-126701
[Abstract]
(587)
[HTML 1 KB]
[PDF 305 KB]
(414)
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77201 |
Zhai Dong-Yuan (翟东媛), Zhu Jun (朱俊), Zhao Yi (赵毅), Cai Yin-Fei (蔡银飞), Shi Yi (施毅), Zheng You-Liao (郑有炓) |
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High performance trench MOS barrier Schottky diode with high-k gate oxide |
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Chin. Phys. B
2015 Vol.24 (7): 77201-077201
[Abstract]
(1054)
[HTML 1 KB]
[PDF 523 KB]
(1173)
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27302 |
Zheng Xue-Feng (郑雪峰), Fan Shuang (范爽), Chen Yong-He (陈永和), Kang Di (康迪), Zhang Jian-Kun (张建坤), Wang Chong (王冲), Mo Jiang-Hui (默江辉), Li Liang (李亮), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation |
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Chin. Phys. B
2015 Vol.24 (2): 27302-027302
[Abstract]
(967)
[HTML 0 KB]
[PDF 390 KB]
(611)
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18501 |
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军) |
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GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics |
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Chin. Phys. B
2015 Vol.24 (1): 18501-018501
[Abstract]
(639)
[HTML 0 KB]
[PDF 385 KB]
(508)
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58105 |
Huang Shi-Hua (黄仕华), Liu Jian (刘剑) |
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Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering |
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Chin. Phys. B
2014 Vol.23 (5): 58105-058105
[Abstract]
(608)
[HTML 1 KB]
[PDF 341 KB]
(387)
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38403 |
Li Ming (黎明), Wang Yong (王勇), Wong Kai-Ming (王凯明), Lau Kei-May (刘纪美) |
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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (3): 38403-038403
[Abstract]
(701)
[HTML 1 KB]
[PDF 1317 KB]
(885)
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37303 |
Lin Fang (林芳), Shen Bo (沈波), Lu Li-Wu (卢励吾), Xu Fu-Jun (许福军), Liu Xin-Yu (刘新宇), Wei Ke (魏珂) |
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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18Al0.82N/GaN heterostructures |
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Chin. Phys. B
2014 Vol.23 (3): 37303-037303
[Abstract]
(586)
[HTML 1 KB]
[PDF 524 KB]
(372)
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27101 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Cai Shu-Jun (蔡树军) |
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Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes |
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Chin. Phys. B
2014 Vol.23 (2): 27101-027101
[Abstract]
(678)
[HTML 1 KB]
[PDF 268 KB]
(730)
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56104 |
Wang Ying(王颖), Jiao Wen-Li(焦文利), Hu Hai-Fan (胡海帆), Liu Yun-Tao(刘云涛), and Cao Fei(曹菲) |
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A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier |
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Chin. Phys. B
2012 Vol.21 (5): 56104-056104
[Abstract]
(1486)
[HTML 1 KB]
[PDF 216 KB]
(577)
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40702 |
Gu Hong-Fang (谷红芳),Cai Wen-Yan (蔡文艳),Wei Yu-Ke (魏玉科),Liu Zheng-Hao (刘政豪),Wang Qian (王倩),Wang Yue (王越),Dai Yuan-Dong (戴远东),Ma Ping (马平) |
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Measurements, characteristics, and origin of new electromagnetic interference on magnetocardiographic measurements |
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Chin. Phys. B
2012 Vol.21 (4): 40702-040702
[Abstract]
(1339)
[HTML 1 KB]
[PDF 544 KB]
(898)
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127204 |
Liu Li(刘莉), Yang Yin-Tang(杨银堂), and Ma Xiao-Hua(马晓华) |
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The electrical characteristics of a 4H–silicon carbide metal–insulator–semiconductor structure with Al2O3 as the gate dielectric |
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Chin. Phys. B
2011 Vol.20 (12): 127204-127204
[Abstract]
(1451)
[HTML 1 KB]
[PDF 359 KB]
(1194)
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117701 |
Zou Cheng(邹成), Chen Bin(陈斌), Zhu Xiao-Jian(朱小健), Zuo Zheng-Hu(左正笏), Liu Yi-Wei(刘宜伟), Chen Yuan-Fu(陈远富), Zhan Qing-Feng(詹清峰), and Li Run-Wei(李润伟) |
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Local leakage current behaviours of BiFeO3 films |
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Chin. Phys. B
2011 Vol.20 (11): 117701-117701
[Abstract]
(1434)
[HTML 1 KB]
[PDF 377 KB]
(1079)
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127304 |
Lin Fang(林芳), Shen Bo(沈波),Lu Li-Wu(卢励吾), Ma Nan(马楠), Xu Fu-Jun(许福军), Miao Zhen-Lin(苗振林), Song Jie(宋杰), Liu Xin-Yu(刘新宇), Wei Ke(魏珂), and Huang Jun(黄俊) |
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Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at high temperatures |
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Chin. Phys. B
2010 Vol.19 (12): 127304-127304
[Abstract]
(1665)
[HTML 1 KB]
[PDF 1225 KB]
(1280)
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17307 |
Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Zhu Ji-Hong(朱继红), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Wang Yu-Tian(王玉田) , and Yang Hui(杨辉) |
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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices |
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Chin. Phys. B
2010 Vol.19 (1): 17307-017307
[Abstract]
(1485)
[HTML 1 KB]
[PDF 689 KB]
(1196)
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1614 |
Liu Fang(刘芳), Wang Tao(王涛), Shen Bo(沈波), Huang Sen(黄森), Lin Fang(林芳), Ma Nan(马楠), Xu Fu-Jun(许福军), Wang Peng(王鹏), and Yao Jian-Quan(姚建铨) |
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The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact |
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Chin. Phys. B
2009 Vol.18 (4): 1614-1617
[Abstract]
(1491)
[HTML 1 KB]
[PDF 171 KB]
(834)
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768 |
Xu Gao-Bo(许高博) and Xu Qiu-Xia(徐秋霞) |
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Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition |
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Chin. Phys. B
2009 Vol.18 (2): 768-772
[Abstract]
(1353)
[HTML 1 KB]
[PDF 2177 KB]
(996)
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5479 |
Hu Shi-Gang(胡仕刚),Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Cao Yan-Rong(曹艳荣), Chen Chi(陈炽), and Wu Xiao-Feng(吴笑峰) |
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Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature |
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Chin. Phys. B
2009 Vol.18 (12): 5479-5484
[Abstract]
(1572)
[HTML 1 KB]
[PDF 169 KB]
(962)
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821 |
Chen Hai-Feng(陈海峰), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Li Kang(李康), and Ni Jin-Yu(倪金玉) |
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Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress |
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Chin. Phys. B
2007 Vol.16 (3): 821-825
[Abstract]
(1573)
[HTML 1 KB]
[PDF 489 KB]
(745)
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1879 |
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) |
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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer |
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Chin. Phys. B
2006 Vol.15 (8): 1879-1882
[Abstract]
(1496)
[HTML 1 KB]
[PDF 381 KB]
(622)
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2297 |
Wang Yuan(王源), Jia Song(贾嵩), Chen Zhong-Jian(陈中建), and Ji Li-Jiu(吉利久) |
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Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process |
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Chin. Phys. B
2006 Vol.15 (10): 2297-2305
[Abstract]
(1603)
[HTML 0 KB]
[PDF 488 KB]
(700)
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1886 |
Wang Yan-Gang (王彦刚), Xu Ming-Zhen (许铭真), Tan Chang-Hua (谭长华), Zhang J.F., Duan Xiao-Rong (段小蓉) |
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The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses |
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Chin. Phys. B
2005 Vol.14 (9): 1886-1891
[Abstract]
(1173)
[HTML 1 KB]
[PDF 374 KB]
(778)
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